Replica Watches: 2014-01

2014-01-29

Power YouTube videos support power converter adoption

28th January 2014

Erricsson power converter design videos Ericsson has put together videos to promote its 3E PSU portfolio, showing potential adopters how to use the firm’s Digital Power Designer on-line tool.

“With built-in digital control and monitoring, the 3E series includes isolated bus converters and digital point-of-load [POL],” said the firm. “The latest version of Digital Power Designer inclues a number of features that enable board power designers and system architects to simulate either simple or complex power schemes. Version 1.4 features loop compensation functionality that makes it easy to simulate output capacitors and output filtering networks such as PI filters, and to optimise loop response without hardware modification for the end application.”

There is also the 3E Design Toolbox which includes five boards supporting power interface modules, bus converters, current sharing, single-in-line 3E POL regulators and a generic board accommodating through-hole 3E POL regulators. All the boards can be interconnected to reflect the end application and be configured and monitored via Power Designer software.

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2014-01-28

Power Formula 1 cars more hybrid than hybrids from today

28th January 2014

2014 Renault Formula1 engine 400

For the 2014 season, Formula 1 cars will have smaller engines, plus two ‘energy recovery systems’ (ERS): regenerative braking, like most road hybrids, and an exhaust gas-driven electrical generator – the kind of electrically-enhanced turbo charging that has yet to reach road cars.

Regenerative braking is not new to Formula 1. Hybrid technology was first introduced to the race series in 2009 with ‘Kinetic Energy Recovery System’ (KERS), whose influence has been increased by regulation over the years.

However, today is the day when cars both ERS systems, and far more energy storage, start pre-season testing in Jerez, Spain.

“The 2.4 litre normally-aspirated V8 engines of 2013 produced around 750bhp, with an additional 80bhp available for around six seconds per lap from KERS. The 2014 V6s put out around 600bhp. However, the two ERS systems (ERS-K and ERS-H) will give drivers an additional 160bhp [120kW] or so for approximately 33 seconds per lap,” said the race organisation. “Unlike in 2013, the driver no longer has to push a button to active ERS – the power is simply delivered to the rear wheels via the throttle pedal. Therefore, whilst you could still lap relatively competitively without KERS in 2013, an ERS problem in 2014 will be much more debilitating to performance.”

2014 Renault Formula1 energy recovery 425

2014 Renault Formula1 power system

The two parts of ERS are : ‘motor generator unit – kinetic’ [MGU-K], and ‘motor generator unit – heat’ [MGU-H]), plus an ‘energy store’ (ES) and control electronics. Renault describes its energy store as a “battery”. It is unclear if there is a super-capacitor element as well. It must weigh between 20 and 25kg.

MGU-K, like KERS, uses a motor-generator to deliver power (120kW) for acceleration and extract energy instead of friction brakes for deceleration.

MGU-H also uses a motor-generator, connected to the turbocharger. Energy extracted can be used to feed the MGU-K directly, stored for later use by the MGU-K, or stored to be feed back into the turbocharger.

“Unlike the MGU-K which is limited to recovering 2MJ of energy per lap, the MGU-H is unlimited. MGU-H also controls the speed of the turbo, speeding it up to prevent turbo lag or slowing it down in place of a more traditional wastegate,” said Formula 1.

A maximum of 4MJ per lap can be returned to the MGU-K and from there to the drivetrain. “That’s ten times more than with 2013’s KERS,” said Formula 1.

Although the cars are expected to be just as fast as before, they will be more efficient.

Accordingly the amount of fuel allowed per car per race is now limited to 100kg, with a flow limit of 100kg/hour.

Last year fuel was unlimited, with around 160kg consumed and a flow of around 170kg/h.

“While the cars will likely be run at the limit of fuel flow during much of practice and qualifying, it will have to be a different story during races when cars are running for well over an hour,” said the organisation.

The minimum weight of car and driver has been increased by 48kg from 2013, up to 690kg to compensate for the new power unit and associated systems.

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Research Space: Dream Chaser mini shuttle gears up for first orbital flight

28th January 2014

Dream Chaser - Sierra Nevada Corp - Artist impression NASA astronauts may be getting a sweet new ride. Engineers at Sierra Nevada Corporation have announced that the Dream Chaser will make its first orbital flight on 1 November 2016.

The Dream Chaser will launch attached to an Atlas V rocket as shown in this artist’s impression. In previous flight tests, the craft was “flown” suspended from a helicopter. Its first free flight ended badly when it crash-landed after successfully gliding on autopilot from an altitude of 3.8 kilometres.

The Dream Chaser is one of three spacecraft vying to replace NASA’s retired space shuttle and restore the US’s ability to send astronauts into orbit. Currently, astronauts must hitch a ride to the International Space Station in Russian Soyuz capsules. Other contenders being developed with NASA’s support are Boeing’s CST-100 and SpaceX’s Dragon.

Although the Dream Chaser is small – about 9 metres long, compared with 37 metres for the space shuttle – it can nevertheless carry up to seven astronauts and their equipment.

The uncrewed flight in 2016 will launch from Cape Canaveral, Florida, and spend about a day in orbit. Sierra Nevada is planning a crewed mission for 2017.

Syndicated content: Aviva Rutkin, New Scientist

Image: Artist’s impression – Sierra Nevada Corp

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Information Technology Solar charger for iPhones is a Kickstarter hit

28th January 2014

San Diego-based start-up StrongVolt has raised $52,000 on Kickstarter crowd-funding site for its iPhone and iPad solar charger.

The charger consists of multiple panels which fold up into a “pocket-sized” format.

Dubbed SmartCharger, it uses patent-pending technology developed by the start-up which allows the solar charger to automatically reconnects after passing under clouds or shade and is specifically designed for iDevice compatibility.

These are different power verison of the charger ranging from 3W to 18W. The 18W version (28.5″x12.5″x0.2″) charges an iPhone in one and a half hours and the 5W version (15.4″x7″x0.2″) charges an iPhone in three and a half hours, according to StrongVolt.

“Apple iDevices such as iPods, iPhones and iPads are notorious for not working with existing solar chargers because they require a constant and stable power source,” claimed StrongVolt.

“The SunTrack technology was specifically developed to eliminate the “charger not supported” issue plaguing these devices,” said the start-up.

It can also be used ith Android and Windows smartphones and Kindle e-readers.

Folded dimensions range from 7″x3.9″x1.1″ to 7.2″x7.5″x2.6″.

According to the company, the breakthrough demonstration of the technology took place on an overcast day in China in November when it tested the latest version of its chip.

You can see the results of that test in the video.

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Discretes Toshiba expands mosfet range to 250V

28th January 2014

Toshiba mosfet 400 05feb14 Toshiba has 32 power mosfets for synchronous rectification, primary side switching and secondary side switching, with device from 60 to 250V.

They come in TSON (3x3mm) or SOP (5x6mm) packages.

“On-resistance values of many members of the family are best in class,” claimed the firm, quoting: the 100V TPH4R50ANH (4.5mΩmax at 10VGS) and 200V TPH2900ENH (29mΩmax at 10VGS).

Rating choice is 60, 80, 100, 150, 200 or 250V.

These are ‘VIII-H’ mosfets based on the company’s eighth generation UMOS trench process.

Target applications include ac/dc and dc/dc conversion in industrial systems, digital home appliances, computing equipment and gaming products.

“The 80 to 150V devices will be particularly well-suited to power supplies in various elements of telecommunications application,” said Toshiba.

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Business X-FAB and Imec offer 0.18 micron SOI HV MPW runs

28th January 2014

Analogue/mixed-signal foundry X-FAB is working with Imec to offer multi-project wafer runs through imec’s EUROPRACTICE IC Service for X-FAB’s 0.18 micrometer SOI HV process (XT018) and a junction-isolated HV process (XH018).

The offered service enables small start-ups and academic institutions throughout Europe to access the full functionality of X-FAB’s high-voltage/low-power 0.18 micrometer technology and prototype ASIC designs in a cost-effective way.

The EUROPRACTICE IC Service offered by imec and Fraunhofer brings ASIC design and manufacturing capability within the technical and financial reach of anyone who wishes to use ASICs.

It offers low-cost ASIC prototyping and small volume production ramp-up to European universities and publicly funded research institutes for microelectronic and microsystem design through multi-project wafer (MPW) and dedicated wafer runs.

“Through our cooperation with imec’s EUROPRACTICE service we access an innovative network of start-up companies, universities and institutes across Europe,” says X-FAB CEO Rudi De Winter, “one growth area in which Europe is playing a leading role is the More than Moore domain. Offering technologies to integrate more and more functions in one IC, such as analog components, high-voltage electronics, non-volatile memories and controllers is X-FAB’s core competency. We believe that our collaboration with Imec offers new opportunities for semiconductor researchers and developers in Europe to continue to innovate in the field of More than Moore.”

X-FAB’s XH018 is the first and only 0.18 micrometer platform with high-temperature, high-voltage (HV) and non-volatile memory (NVM) capability including Flash and NVRAM IP. This modular mixed-signal high-voltage CMOS technology extends the operating temperature range of integrated circuits to +175°C. With the ability to integrate HV and NVM in a single platform, it is ideal for automotive applications and for motor control and power management or power-conversion applications for a wide range of voltages in industrial, medical and consumer systems.

X-FAB’s XT018 is the only trench dielectric isolated SOI foundry process with 200V MOS capability at 180nm. With an operating temperature range of -40 to 175°C, it supports a new generation of cost-effective “Super Smart Power” technologies. The XT018 process is ideally suited for high-performance systems requiring multiple voltage domains integrated and isolated in one chip. For example, it is useful for medical ultrasound applications and for applications that need bidirectional isolation, such as piezo actuators and capacitive-driven micromechanics.

The MPW service for X-FAB’s XT018 and XH018 technology is available now through EUROPRACTICE at: http://www.europractice-ic.com/technologies_XFAB.php.

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Business ST annual revenues fall to $8.02 billion; expects 9.5% fall in Q1

28th January 2014

STMicroelectronics had Q4 revenues of $2.01 billion, gross margin was 32.9%, and the net loss was $36 million.

2013 full year revenues were $8.08 billion for a net loss of $500 million.

2012 revenues were $8.49 billion and 2011 revenues were $9.7 billion.

In the last two years ST has racked up losses of $1.6 billion.

“In the first quarter, we expect overall revenues to decrease sequentially by about 9.5%,” said ST CEO Carlo Bozotti.

ST had net cash of $741 million on December 31, 2013, compared to $1.19 billion on December 31, 2012.

ST’s had ‘financial resources’ of $1.89 billion and debt of $1.15 billion on December 31, 2013, compared to $2.49 billion and $1.30 billion, respectively, on December 31, 2012.

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Business Tablet processors on a roll

28th January 2014

300m tablet processors will ship in 2014, says IHS, very close to the 315 million x86 PC processors shipped last year according to IC Insights.

Last year 243.1 million tablet processors were shipped, says IHS, and by 2016 400 million a year will ship.

‘The main challenge facing Intel will be how to compete in the entry-level segment,’ says IHS.

Intel will be up against Chinese chip manufacturers Rockchip, Allwinner, and Amlogic and Taiwanese chip-maker Mediatek, all of which are used to cut-throat competition on price – and some of the Chinese tablets sell for $50.

Intel is planning to pay tablet manufacturers to use its chips – a strategy which is likely to cost Intel upwards of $800 million this year.

That’s on top of the losses, estimated at $2.5 billion, which Intel made trying to sell mobile processors last year.

‘One major advantage for the Chinese is the capability to produce turnkey chip solutions ready for deploying in any number of generic white-box tablets,’ says IHS, ‘meanwhile, other Chinese vendors are said to be training their sights on higher ground, which could pose another threat to Intel. Here the aim is to gain design wins with global brands like Lenovo and Hewlett-Packard, which have tablet models straddling the midrange. Once again, an aggressive pricing strategy is the chief weapon of this group of Chinese makers, which could make the midrange tablet processor field more competitive in the process.’

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Diary Dates JTAG boundary scan webinars are free

27th January 2014

JTAG tech Webinar JTAG Technologies is running a series of webinars in February with one hour learning modules covering JTAG boundary-scan topics.

Starting with a technology introduction on February 4th the series moves on to cover – ‘Design for test’ requirements when implementing boundary-scan on February 6th.

The following week will introduce the use of start of the art application developer tools (e.g. JTAG ProVision). Other topics to be covered include the use of low-cost JTAG tools such as JTAGLive Studio, the scope for emulative test and

programming using the CoreCommander tool-set and also ‘Productionising’ tests with in a sequence.

Registration, full details and dates are available online

These are live webinars and participants will be able to ask (type) questions in real-time.

The anticipated audience will include electronics design engineers looking at JTAG for hardware validation, test engineers not yet familiar with JTAG, project managers SME owners and production engineers.

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Sensors Digital colour sensing chip is tiny

27th January 2014

Intersil colour sensor

Intersil has announced a light-in digital-out colour photometric chip.

Called ISL29125, and measures only 1.65×1.65mm, it is intended to be used alongside displays, monitoring ambient light so the perceived display colour and intensity can be maintained.

“Specifically, in OLED display TV applications, it can be used to adjust the blue organic material ageing profile to maintain consistent contrast and brightness throughout the life of the display,” said the firm.

Dynamic range is 5.7mlux to 10klux, in two ranges: 0.0057 to 375lux, and 0.152 to 10,000 lux, measured through an internal integrating 16bit ADC operating at 100ms/colour.

Part-to-part variation of RGB output is said to be less than +/-10%

Operating is over -40 to +85°C from 2.25V to 3.63V, using 85uA, or 0.5uA when shut down.

The digital interface is I2C, needing pull-ups to between 1.7 and 3.63V.

There is an evaluation board and a presentation on the chip.

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2014-01-27

Research Phosphorene: graphene with a bandgap

2014/01/27

US and Chinese scientist have made transistors from a graphene-like substance called black phosphorus, which is being dubbed phosphorene in its few-layer form.

Just like graphene, phosphorus can form a flat sheet molecule. Although up-close it is heavily corrugated while graphene is flat – the difference being a result of phosphorus’ three covalent bonds and carbon’s four.

“The three bonds take up all three valence electrons of phosphorus so, unlike graphene, monolayer black phosphorus is a semiconductor,” said the Chinese team in its paper ‘Black Phosphorus Field-effect Transistors‘, published on arxiv.org. “For few-layer phosphorene, interlayer interactions reduce the band gap for each layer added, and eventually reach ~0.3eV for bulk black phosphorus.”

In the bulk form, layers are held together by Van der Waals – also like graphene. For research, flakes of both materials can be removed from lumps of the raw material using stick tape.

The Chinese team, from Fudan University, Shanghai, and University of Science and Technology of China, Hefei, made back-gate transitors by putting flakes on an oxide-coated silicon wafer, then depositing metal source and drain contacts on the flake.

With a 5nm channel on a 7.5nm thick flake, and on/off current ratio of around 10⁵ was measured.

“The measured drain current modulation is four orders of magnitude larger than that in graphene due to its [graphene's] lack of bandgap,” said the team in its paper.

The maximum ratio could be higher, but limitations in the wafer oxide layer prevented the transistors from being pushed into saturation.

Phosphorene has p-type tendencies. Mobility was thickness dependent, and hole mobility peaked around 1,000cm²/Vs on 10nm thick flakes.

The US team also found a direct bandgap, describing a mobility hole mobility of 286cm2/Vs and on/off ratio up to 104 from 1µm channel fets in a paper ‘Phosphorene: A New 2D Material with High Carrier Mobility‘, also published on arxiv.org.

Molybdenum disulphide is another material that forms 2D structures with graphene-like behaviour, this time exhibiting n-type behaviour.

Also described in its paper, the US team, from Purdue University and Michigan State University, went on to make a CMOS inverter from 2D materials – phosphorene for PMOS and MoS2 for NMOS transistors, using top-gate structures with Al₂O₃ high-k gate dielectric.

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